| 1. | The synthesis of boron - doped diamond at high pressure and high temperature
添加剂硼对纯铁粉末触媒合成金刚石的影响 |
| 2. | It is demonstrated that edm method can effectively process b - doped diamond film
证实了掺硼金刚石膜是可以电加工的。 |
| 3. | Dta curves of b - doped diamond had been studied , and the resistances had been measured
分析了含硼金刚石的差热曲线，并测量了其电阻值。 |
| 4. | Conductivity and thermo - stability of b - doped diamond increased with boron contents increasing
含硼金刚石热稳定性和导电性随着硼含量增加而提高。 |
| 5. | Morphology of b - doped diamond had been observed by sem . boron contents and impurity situation of b - doped diamond had been analyzed by ftir / raman and xrf
对含硼金刚石在sem下进行形貌观察，通过红外拉曼光谱、 x射线荧光( xrf )分析硼掺杂的存在状态和含量。 |
| 6. | In this paper , a new method was presented that b - doped diamond was synthesized at high pressure and high temperature ( hthp ) using b - doped graphite intercalation compounds ( gics )
本论文提出了利用含硼石墨层间化合物( gics )高温高压( hthp )合成含硼金刚石的新工艺。 |
| 7. | Edm method was adopted to process b - doped diamond film and the process was studied . the morphology and composition of the machined diamond film was analyzed by sem and raman . surface roughness was measured by surface roughness tester
研究了电火花加工、电火花抛光和线切割加工掺硼金刚石膜工艺，对加工后的膜进行了sem分析、 raman分析和已加工表面粗糙度分析。 |
| 8. | B - doped diamonds were obtained under the condition of 1250 ~ 1350 and 5gpa ~ 6gpa . color of diamond became deep with boron contents increasing , till becoming black . b - doped diamond was polycrystalline , and crystal surface was developed incompletely
利用这些gics ，在1250 1350 、 5 6gpa下合成了含硼金刚石，金刚石颜色随着硼含量增加而加深直至黑色，含硼金刚石生长成多晶颗粒，晶面发育不完整。 |
| 9. | Fabrication equipment and theory of b - doped diamond film were introduced . mechanical systems were studied and electric and control systems were designed . experimental results show that the equipment can deposit b - doped large area high - quality thick diamond film under the control system
研究了掺硼金刚石膜设备及其原理，研究了机械系统，设计了电气系统和控制系统，系统运行表明该设备在控制系统监控下沉积出高质量大面积的掺硼金刚石膜。 |
| 10. | It shows that the particle number will fluctuate with the recombination coefficient ; 3 ) the dynamic process of the n - type doped diamond film is simulated . the particle distributions of s , s + and ar + are gotten . the result has important reference to the investigation of n - type diamond film doping at low temperature
( 3 )对不同气压、偏压和不同的配比情况下n型硫掺杂的金刚石薄膜的动力学过程进行了模拟，得出了掺杂元素s和s ~ +以及惰性气体ar ~ +的粒子数分布，计算结果对掺杂过程的研究有重要的参考价值。 |
